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VS5804AP - N-Channel 60V MOSFET

Features

  • 175 °C Junction Temperature.
  • TrenchFET® Power MOSFET.
  • Material categorization: Top View DFN5X6 Bottom View PIN1 Top View 1 8 2 7 3 6 4 5 D G S N-Channel MOSFET.

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Datasheet Details

Part number VS5804AP
Manufacturer VBsemi
File Size 309.21 KB
Description N-Channel 60V MOSFET
Datasheet download datasheet VS5804AP Datasheet

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    VS5804AP-VB VS5804AP-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 0.003 at VGS = 10 V 60 0.005 at VGS = 4.5 V ID (A)a 100 85 FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: Top View DFN5X6 Bottom View PIN1 Top View 1 8 2 7 3 6 4 5 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 100 85a Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction) IS 80a Avalanche Current IAS 70 Single Avalanche Energy (Duty Cycle  1 %) L = 0.
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