VS6888BT Key Features
- 175 °C Junction Temperature
- Trench Power MOSFET
- Material categorization
- Part: VS6888BT
- Manufacturer: VBsemi
- Size: 256.37 KB
Other VS6888BT Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Vanguard Semiconductor |
VS6888BT | N-Channel Advanced Power MOSFET |
|
Vanguard Semiconductor |
VS6888BTD | N-Channel Advanced Power MOSFET |
|
Vanguard Semiconductor |
VS6888AT | N-Channel Advanced Power MOSFET |
|
Vanguard Semiconductor |
VS6888ATD | N-Channel Advanced Power MOSFET |
VS6888BT Description
VS6888BT-VB VS6888BT-VB Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single.