VSE008P03MS Description
VSE008P03MS-VB VSE008P03MS-VB Datasheet P-Channel 30 V (D-S) MOSFET .VBsemi. VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID -30 V 11 mΩ 18 mΩ -45.
VSE008P03MS Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- Trench Power MOSFET
- Low Thermal Resistance Power
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2002/95/EC