VSP009N10MS Description
VSP009N10MS-VB VSP009N10MS-VB Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.006 at VGS = 10 V ID (A).
VSP009N10MS Key Features
- Trench Power MOSFET
- 175 °C Junction Temperature
- Low Thermal Resistance Package
- 100 % Rg Tested