VST007P06MS Overview
VST007P06MS-VB VST007P06MS-VB Datasheet P-Channel 60 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.0074 at VGS = - 10 V 0.0094 at VGS = - 4.5 V ID (A)c - 90 -.
VST007P06MS Key Features
- Trench Power MOSFET
- pliant to RoHS Directive 2002/95/EC
