VST007P06MS - P-Channel 60V MOSFET

Datasheet Summary

Features

Trench Power MOSFET.
Compliant to RoHS Directive 2002/95/EC.

VBsemi

📥 Download Datasheet

Datasheet Details

Part number	VST007P06MS
Manufacturer	VBsemi
File Size	250.18 KB
Description	P-Channel 60V MOSFET
Datasheet	VST007P06MS Datasheet
Additional preview pages of the VST007P06MS datasheet.

📁 Similar Datasheet

VST007P06MS - P-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VST007N06HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VST007N07MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VST003N06HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VST003N06MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VST004P03MS - P-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VST006N04MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VST008N03MS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VST008N07HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VST008N10HS - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)

Other Datasheets by VBsemi

Full PDF Text Transcription

Click to expand full text

VST007P06MS-VB VST007P06MS-VB Datasheet P-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.0074 at VGS = - 10 V 0.0094 at VGS = - 4.5 V ID (A)c - 90 - 90 FEATURES • Trench Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Primary Switch RoHS COMPLIANT TO-220AB S G Drain connected to Tab GD S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)c TC = 25 °C TC = 125 °C ID Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya IDM IAS L = 0.

Published: Oct 26, 2025 |