VST007P06MS - P-Channel 60V MOSFET

VBsemi

Key Features

Trench Power MOSFET.
Compliant to RoHS Directive 2002/95/EC.

VST007P06MS p-channel 60v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	VST007P06MS
Manufacturer	VBsemi
File Size	250.18 KB
Description	P-Channel 60V MOSFET
Datasheet	VST007P06MS Datasheet

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VST007P06MS-VB VST007P06MS-VB Datasheet P-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.0074 at VGS = - 10 V 0.0094 at VGS = - 4.5 V ID (A)c - 90 - 90 FEATURES • Trench Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Primary Switch RoHS COMPLIANT TO-220AB S G Drain connected to Tab GD S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)c TC = 25 °C TC = 125 °C ID Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya IDM IAS L = 0.