VBsemi Electronics W360
N- & P-Channel 100V MOSFET
| Part No. | W360 |
|---|---|
| Datasheet | W360 Download |
| Manufacturer | VBsemi Electronics |
| Description | N- & P-Channel 100V MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFET● 100 % Rg and UIS tested
APPLICATIONS
● H bridge / DC-AC inverter - Brushless DC motors S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 D1 G1 N-Channel MOSFET S1 S2 G2 P-Channel MOSFET D2ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (100 μs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current (100 μs Pulse Width) Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TF = 25 °C TF = 70 °C TA = 25 °C TA = 70 °C TF = 25 °C TA = 25 °C L = 0.1 mH TF = 25 °C TF = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS ISM IAS EAS PD TJ, Tstg 100 -100 ± 20 2.2 -1.9 2.1 -1.5 3.3 b,c -1.7 b,c 1.8 b,c -1.4 b,c 8 -6 2.2 -1.9 1 b,c -1.7 b,c 8 -6 3 -2 0.45 2 2.5 1.8 1.6 1.6 1.0 b,c 1.1 b,c 0.8 b,c 1.0 b,c -55 to 150 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CHANNEL TYP.
