VBsemi Electronics WFP634
Power MOSFET
| Part No. | WFP634 |
|---|---|
| Datasheet | WFP634 Download |
| Manufacturer | VBsemi Electronics |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Dynamic dV/dt rating● Repetitive avalanche rated
● Fast switching
● Ease of paralleling
● Simple drive requirements Available Available TO-220AB S D G D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Peak Diode Recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 , IAS = 14 A (see fig. 12). c. ISD 14 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
