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WSP9926B Datasheet PDF

VBsemi Electronics WSP9926B

Dual N-Channel 20V MOSFET

Part No. WSP9926B
Datasheet WSP9926B Download
Manufacturer VBsemi Electronics
Description Dual N-Channel 20V MOSFET
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WSP9926B datasheet page 1 preview

FEATURES

● Halogen-free According to IEC 61249-2-21 Definition
● Trench Power MOSFET
● 100 % UIS Tested
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

● Set Top Box
● Low Current DC/DC D1 D2 G1 S1 N-Channel MOSFET G2 S2 N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ± 12 TC = 25 °C 10a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 7.0 8.1b, c Pulsed Drain Current TA = 70 °C 7.2b, c A IDM 44 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 3.25 1.88b, c Single Pulse Avalanche Current L = 0.1 mH IAS 6 Single Pulse Avalanche Energy EAS 1.45 mJ TC = 25 °C 2.7 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 1.77 1.78b, c W TA = 70 °C 1.14b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes: a.
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