VBsemi Electronics WST2318
The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.| Part No. | WST2318 |
|---|---|
| Datasheet | WST2318 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 20V MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Gen III Power MOSFET
● 100 % Rg Tested
● 100 % UIS Tested
● Compliant to RoHS Directive 2002/95/EC D G1 S2 3D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ± 12 TC = 25 °C 9a, g Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C 6.5g 7 b, c A 4.5b, c Pulsed Drain Current IDM 32g Avalanche Current Avalanche Energy L = 0.1 mH IAS 15 EAS 11.25 mJ Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 3a, g 1.5b, c A TC = 25 °C 3.5 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 2.0 2.3b, c W TA = 70 °C 1.0b, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg - 55 to 150 260 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 29 3.6 Maximum 36 4.5 Unit °C/W Notes: a.
