YJG25GP10AQ - P-Channel 100V MOSFET

Datasheet Summary

Features

TrenchFET® Power MOSFET.
100 % UIS Tested.

VBsemi

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Datasheet Details

Part number	YJG25GP10AQ
Manufacturer	VBsemi
File Size	363.58 KB
Description	P-Channel 100V MOSFET
Datasheet	YJG25GP10AQ Datasheet
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YJG25GP10AQ-VB YJG25GP10AQ-VB Datasheet P-Channel 1 00-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 100 0.075 at VGS = - 10 V 0.08 0 at VGS = - 4.5 V ID (A)a - 20 - 18 Qg (Typ.) 7.6 nC FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch www.VBsemi.com Top View DFN5X6 Bottom View PIN1 Top View 1 8 2 7 3 6 4 5 S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.

Published: Mar 25, 2025 |