V6WL45C Datasheet Dual Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: V6WL45C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.

Datasheet Details

Part number	V6WL45C
Manufacturer	Vishay
File Size	177.22 KB
Description	Dual Trench MOS Barrier Schottky Rectifier
Datasheet	V6WL45C-VISHAY.pdf

Key Features

Trench MOS Schottky technology.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation K Dual Trench MOS Barrier Schottky Rectifier TMBS® TO-252 (D-PAK).
Meets MSL level 1 , per J-STD- 020, LF maximum peak of 260 °C.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 A A V6WL45C A A K.

V6WL45C Distributor & Price

Compare V6WL45C distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Vishay

Part Number	Description
V6W60C-M3	Dual Trench MOS Barrier Schottky Rectifier
V6WM100C-M3	Dual Trench MOS Barrier Schottky Rectifier