Datasheet Summary
.vishay.
Vishay General Semiconductor
Ultra Low VF = 0.34 V at IF = 3 A
Features
- Trench MOS Schottky technology
- Ideal for automated placement
- Low forward voltage drop, low power losses
- High efficiency operation
Dual Trench MOS Barrier Schottky Rectifier
TMBS®
TO-252 (D-PAK)
- Meets MSL level 1 , per J-STD- 020, LF maximum peak of 260 °C
- Material categorization: For definitions of pliance please see .vishay./doc?99912
A V6WL45C
A A K HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/D C conve rters, switching power supplies, freewheelin g diodes, O R-ing diode, and reverse battery protection.
MECHANICAL DATA PRIMARY CHARACTERISTICS
IF(AV)...