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VF04N60 - MOSFET / N-Channel Enhancement Mode

Description

4N60 / VF04N60 MOSFET / N-Channel Enhancement Mode VF04N60 Front View Package Type TO-220F (3 Lead) Die Size (With Scribe Lane) 2920µm x 2910µm Back Metal Ti / Ni / Ag Gate Pad Size Die Attach 370µm x 213µm Epoxy Molding Compound Scribe Lane Wafer Thickness Gold Wire 80µm 250µm +/-10µm 1

Features

  • ∋ High current handling capability ∋ Rugged and reliable ∋ Surface Mount package TO-220FP Absolute Maximum Ratings (TA = 25°C unless specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain-Source Diode Forward Current a ID IS Limit 600 ±30 4 4 Unit V V A A Revision A P.1 of 3 This document is the property of.

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Datasheet Details

Part number VF04N60
Manufacturer VITELIC
File Size 51.37 KB
Description MOSFET / N-Channel Enhancement Mode
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    VITELIC 4N60 / VF04N60 MOSFET / N-Channel Enhancement Mode VF04N60 Product Summary VDS = 600 V ID = 4A RDS(ON) = 2.5 Ω Features ∋ High current handling capability ∋ Rugged and reliable ∋ Surface Mount package TO-220FP Absolute Maximum Ratings (TA = 25°C unless specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain-Source Diode Forward Current a ID IS Limit 600 ±30 4 4 Unit V V A A Revision A P.1 of 3 This document is the property of VITELIC TECHNOLOGY (INTERNATIONAL) LIMITED, and not allowed to copy or transformed to other format if not under the authority approval.
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