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1N5819-1 - Silicon Schottky Barrier Diode

General Description

The 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage.

Key Features

  • Low Forward Voltage: 490 mV @ IF = 1.0 A.
  • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/586.
  • High Reverse Breakdown Voltage: 45 V.
  • Hermetically Sealed Glass, DO-41 (DO-204AL) and MELF (DO-213AB).

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Datasheet Details

Part number 1N5819-1
Manufacturer VPT
File Size 533.20 KB
Description Silicon Schottky Barrier Diode
Datasheet download datasheet 1N5819-1 Datasheet

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1N5819-1, 1N5819UR-1 Silicon Schottky Barrier Diode Features • Low Forward Voltage: 490 mV @ IF = 1.0 A • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/586 • High Reverse Breakdown Voltage: 45 V • Hermetically Sealed Glass, DO-41 (DO-204AL) and MELF (DO-213AB) Description The 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage. The die, which is passivated with an advanced high-reliability passivation for very fast settling time and low leakage current, is packaged in the industry standard DO-41 hermetically sealed axial leaded glass package as well as the surface mount DO-213AB. This rugged device is capable of reliable operation in all space, military, commercial and industrial applications.