1N6844U3 Datasheet | VPT Components

Features - Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/679 - Low Forward Voltage and Reverse Leakage - Reverse Breakdown Voltage: 100 V - Hermetically Sealed, Low Profile Ceramic SMD0.5 package (U3) - High Surge Capability - Low Capacitance Description The 1N6844U3 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage. The die, which is passivated with an advanced high-reliability passivation for very fast settling time and low leakage current, is packaged in the industry standard U3 hermetically sealed surface mount package. This rugged device is capable of reliable operation in all space, military, and industrial applications. The 1N6844U3 is designed to be used in a wide variety of applications, such as high frequency switching power supplies and resonant power converters. Electrical Specifications: TC = +25°C (unless otherwise specified) Symbol Reverse Leakage Current Reverse Leakage Current VR = 100 V (pk) TC = +125o C VR = 100 V (pk) IR1 m A - IR2 m A - Forward Voltage Forward Voltage Forward Voltage IF = 5.0 A (pk) IF = 15 A (pk) IF = 20 A (pk) TC = +125o C IF = 5.0 A (pk) IF = 15 A (pk) TC = -55o C IF = 5.0 A (pk) VF1 VF2 VF3 - VF4 VF5 - VF6 - Junction Capacitance VR = 5 V dc, f =1 MHz, VSIG = 50 m V (p-p) CJ p F - Dielectric Withstanding Voltage VR = 500 V dc; all leads shorted; measure from leads to case IRES µA - 1 VPT ponents and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .vptponents. for additional data sheets and product...