1N6844U3 - Silicon Schottky Barrier Diode

VPT

General Description

The 1N6844U3 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage.

Key Features

Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/679.
Low Forward Voltage and Reverse Leakage.
Reverse Breakdown Voltage: 100 V.
Hermetically Sealed, Low Profile Ceramic SMD0.5 package (U3).
High Surge Capability.
Low Capacitance.

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1N6844U3 silicon schottky barrier diode by VPT - Datasheet Preview

Datasheet Details

Part number	1N6844U3
Manufacturer	VPT
File Size	436.99 KB
Description	Silicon Schottky Barrier Diode
Datasheet	1N6844U3 Datasheet

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1N6844U3 Silicon Schottky Barrier Diode Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/679 • Low Forward Voltage and Reverse Leakage • Reverse Breakdown Voltage: 100 V • Hermetically Sealed, Low Profile Ceramic SMD0.5 package (U3) • High Surge Capability • Low Capacitance Description The 1N6844U3 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage. The die, which is passivated with an advanced high-reliability passivation for very fast settling time and low leakage current, is packaged in the industry standard U3 hermetically sealed surface mount package. This rugged device is capable of reliable operation in all space, military, and industrial applications.