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2N1481 - NPN Medium Power Silicon Transistor

Download the 2N1481 datasheet PDF. This datasheet also covers the 2N1479 variant, as both devices belong to the same npn medium power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Available in JAN Quality Level per MIL-PRF-19500/207.
  • TO-205AA (TO-5) and TO-205AD (TO-39) Packages.
  • “S” Suffix Denotes TO-205AD (TO-39) Package Style.
  • General Purpose Transistors for Medium Power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N1479-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N1481
Manufacturer VPT
File Size 431.75 KB
Description NPN Medium Power Silicon Transistor
Datasheet download datasheet 2N1481 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N1479, 2N1480, 2N1481, 2N1482 2N1479S, 2N1480S, 2N1481S, NPN Medium Power Silicon Transistor Rev. V3 Features • Available in JAN Quality Level per MIL-PRF-19500/207 • TO-205AA (TO-5) and TO-205AD (TO-39) Packages • “S” Suffix Denotes TO-205AD (TO-39) Package Style • General Purpose Transistors for Medium Power Applications Requiring High Frequency Switching Electrical Characteristics (25oC unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Test Conditions IE = 50 mA dc 2N1479, 2N1481 2N1480, 2N1482 Symbol Units Min. V(BR)CEO V dc 40 50 Collector - Emitter Breakdown Voltage IC = 0.25 mA dc, VEB = 1.5V dc 2N1479, 2N1481 2N1480, 2N1482 V(BR)CEX V dc 60 100 Max.