Datasheet Summary
2N1711, 2N1711S 2N1890, 2N1890S
NPN Low Power Silicon Transistor
Rev. V1
Features
- Available in JAN, JANTX and JANTXV per MIL-PRF-19500/225
- TO-5 and TO-39 Packages
- General Purpose Transistors for Low Power Applications
- Ideal for High Performance Low Noise Amplifiers, Oscillators and Switching
Circuits
Electrical Characteristics (25oC unless otherwise specified)
Parameter Collector
- Emitter Breakdown Voltage
Test Conditions
IC = 30 mA dc 2N1711, 2N1711S 2N1890, 2N1890S
Symbol Units Min.
V(BR)CEO V dc
Collector
- Emitter Breakdown Voltage
IC = 100 mA dc, RBE = 10 Ω 2N1711, 2N1711S 2N1890, 2N1890S
V(BR)CER V dc
Max.
- -
Collector
- Base Cutoff Current...
