2N1711S - NPN Low Power Silicon Transistor

VPT

Download the 2N1711S datasheet PDF. This datasheet also covers the 2N1711 variant, as both devices belong to the same npn low power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Available in JAN, JANTX and JANTXV per MIL-PRF-19500/225.
TO-5 and TO-39 Packages.
General Purpose Transistors for Low Power.

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2N1711S npn low power silicon transistor by VPT - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N1711-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N1711S
Manufacturer	VPT
File Size	651.16 KB
Description	NPN Low Power Silicon Transistor
Datasheet	2N1711S Datasheet

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Other Datasheets by VPT

Part Number	Description
2N1711	NPN Low Power Silicon Transistor
2N1479	NPN Medium Power Silicon Transistor
2N1479S	NPN Medium Power Silicon Transistor
2N1480	NPN Medium Power Silicon Transistor
2N1480S	NPN Medium Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N1711, 2N1711S 2N1890, 2N1890S NPN Low Power Silicon Transistor Rev. V1 Features • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/225 • TO-5 and TO-39 Packages • General Purpose Transistors for Low Power Applications • Ideal for High Performance Low Noise Amplifiers, Oscillators and Switching Circuits Electrical Characteristics (25oC unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Test Conditions IC = 30 mA dc 2N1711, 2N1711S 2N1890, 2N1890S Symbol Units Min. V(BR)CEO V dc 30 60 Collector - Emitter Breakdown Voltage IC = 100 mA dc, RBE = 10 Ω 2N1711, 2N1711S 2N1890, 2N1890S V(BR)CER V dc 50 80 Max.