• Part: 2N2905AL
  • Description: Radiation Hardened PNP Silicon Switching Transistors
  • Category: Transistor
  • Manufacturer: VPT Components
  • Size: 442.72 KB
Download 2N2905AL Datasheet PDF
VPT Components
2N2905AL
Features - Qualified to MIL-PRF-19500/290 - Available in JAN, JANTX, JANTXV, JANS and JANSR - Radiation Tolerant Levels M, D, P, L and R - TO-39 and TO-5 package styles - General Purpose Switching and Amplifier Applications Rev. V3 Electrical Specifications @ TA = 25°C Parameter Off Characteristics: Collector - Emitter Breakdown Test Conditions IC = -10 m A dc 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Collector - Base Cutoff Current VCB = -60 V dc Symbol Units Minimum Maximum V(BR)CEO V dc -40 -60 -60 ICBO1 µA dc - - -10 Collector - Base Cutoff Current Emitter - Base Cutoff Current VCB = -50 V dc 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL VEB = -5.0 V dc ICBO2 n A dc - IEBO1 µA dc - -20 -10 -10 -10 Emitter - Base Cutoff Current VEB = -3.5 V dc IEBO2 n A dc - Collector-Emitter Cutoff Current 2N2904, 2N2905; VCE = -40V dc 2N2904A, 2N2904AL; VCE = -60V dc 2N2905A, 2N2905AL; VCE = -60V dc ICES µA...