VPT 2N2919
NPN Dual Silicon Transistor
| Part No. | 2N2919 |
|---|---|
| Datasheet | 2N2919 Download |
| Manufacturer |  VPT |
| Description | NPN Dual Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/355● TO-78 and U package types
● Radiation Tolerant Levels M, D, P, L, and R Rev. V1
ELECTRICAL CHARACTERISTICS
(TA = +25oC unless otherwise specified) Parameter Collector - Base Cutoff Current Test Conditions VCB = 70 V dc Symbol Units Min. ICBO1 µA dc — Max. 10 Emitter - Base Cutoff Current Breakdown Voltage, Collector-Emitter VEB = 6 V dc IC = 10 mA dc IEBO1 µA dc — 10 V(BR)CEO V dc 60 — Collector - Base Cutoff Current VCB = 45 V dc ICBO2 nA dc 2 Collector - Emitter Cutoff Current VCE = 5 V dc ICEO1 nA dc 2 Emitter - Base Cutoff Current Forward - Current Transfer Ratio 2N2919, 2N2919L, 2N2919U 2N2920, 2N2920L, 2N2920U VEB = 5 V dc VCE = 5 V dc; IC = 10 µA dc IEBO2 nA dc 2 hFE1 60 240 175 600 Forward - Current Transfer Ratio 2N2919, 2N2919L, 2N2919U 2N2920, 2N2920L, 2N2920U Forward - Current Transfer Ratio 2N2919, 2N2919L, 2N2919U 2N2920, 2N2920L, 2N2920U Base - Emitter Saturation Voltage Collector - Emitter...
