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2N3584 - NPN Power Silicon Transistor

General Description

at any time, without notice.

Key Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF19500/384.
  • TO-66 Package.
  • Designed for High Speed Switching and High Voltage Amplifier.

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Datasheet Details

Part number 2N3584
Manufacturer VPT
File Size 455.39 KB
Description NPN Power Silicon Transistor
Datasheet download datasheet 2N3584 Datasheet

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Other Datasheets by VPT

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2N3585 NPN Power Silicon Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3584, 2N3585 NPN Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF19500/384 • TO-66 Package • Designed for High Speed Switching and High Voltage Amplifier Applications Rev. V1 Electrical Characteristics (25oC unless otherwise specified) Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Test Conditions IC = 10 mA dc, 2N3584 IC = 10 mA dc, 2N3585 IC = 15 mA dc Symbol Units Min. V(BR)CEO V dc 250 300 V(BR)CBO V dc 375 500 Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current On Characteristics Forward Current Transfer Ratio VCE = 150 V dc ICEO mA dc — VCE = 300 V dc, VBE = -1.5 Vdc, 2N3584 VCE = 400 Vdc, VBE = -1.