VPT 2N4449
High-Speed Switching Transistor
| Part No. | 2N4449 |
|---|---|
| Datasheet | 2N4449 Download |
| Manufacturer |  VPT |
| Description | High-Speed Switching Transistor |
| Buy | Stock & Price |
FEATURES
● JAN, JANTX, JANTXV, JANS and JANSR Qualified to MIL-PRF-19500/317● For Use in Military and High Reliability
APPLICATIONS
● TO-18 (TO-206AA), TO-46 (TO-206AB) and Surface Mount U, UA, and UB and Package Styles (See Mechanical Outlines for Specific Part/Package Availability) Rev. V1ELECTRICAL CHARACTERISTICS
(+25oC unless otherwise specified) Parameter Collector - Base Cutoff Current Emitter - Base Cutoff Current Test Conditions VCB = 40 V dc VEB = 4.5 V dc 2N2369A, 2N4449 VEB = 6.0 V dc 2N3227 Symbol Units ICBO1 µA dc Min. — IEBO1 µA dc — Breakdown Voltage Collector - Emitter IC = 10 mA dc 2N2369A, 2N4449 2N3227 V(BR)CEO V dc — Collector - Emitter Cutoff Current Collector - Base Cutoff Current VCE = 20 Vdc VCB = 32 V dc ICES µA dc — ICBO2 µA dc — Max. 10 10 15 20 0.4 0.2 Emitter - Base Cutoff Current VEB = 4 V dc IEBO2 µA dc — 0.25 Forward Current Transfer Ratio VCE = 0.35 V dc; IC = 10 mA dc 2N2369A, 2N4449 hFE1 - 40 120 2N3227 70 250 Forward Current Transfer Ratio VCE = 0...
