2N6211 - PNP High Power Transistor

VPT

Key Features

Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/461.
Designed for High Speed Switching and High Voltage Amplifier.

2N6211 pnp high power transistor by VPT - Datasheet Preview

Datasheet Details

Part number	2N6211
Manufacturer	VPT
File Size	537.00 KB
Description	PNP High Power Transistor
Datasheet	2N6211 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N6211	SILICON PNP POWER TRANSISTORS	Central Semiconductor
2N6211	Silicon PNP Power Transistors	Inchange Semiconductor
2N6211	PNP HIGH POWER SILICON TRANSISTOR	Microsemi
2N6212	SILICON PNP POWER TRANSISTORS	Central Semiconductor
2N6212	Power Transistors	RCA

Other Datasheets by VPT

Part Number	Description
2N6212	PNP High Power Transistor
2N6213	PNP High Power Transistor
2N6213A	PNP High Power Transistor
2N6249	NPN Darlington Power Silicon Transistor
2N6250	NPN Darlington Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N6211, 2N6212, 2N6213, 2N6213A PNP High Power Transistor Rev. V1 Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/461 • Designed for High Speed Switching and High Voltage Amplifier Applications • Available in TO-66 package Electrical Characteristics ( TC = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current IC = -200 mA dc 2N6211 2N6212 2N6213 2N6213A -225 V(BR)CEO V dc -300 — -350 -450 (L = 10 mH; f = 30-60 Hz) RBE = 50Ω 2N6211 -250 2N6212 2N6213 V(BR)CER V dc -325 — -375 2N6213A -475 (L = 10 mH; f = 30-60 Hz) RBE = 50Ω VBE = +1.