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2N6299 - PNP Darlington Power Silicon Transistor

Download the 2N6299 datasheet PDF. This datasheet also covers the 2N6298 variant, as both devices belong to the same pnp darlington power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/540.
  • TO-66 (TO-213AA) Package.
  • Ideal for High Gain Amplifier and Medium Speed Switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N6298-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N6299
Manufacturer VPT
File Size 380.58 KB
Description PNP Darlington Power Silicon Transistor
Datasheet download datasheet 2N6299 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N6298 & 2N6299 PNP Darlington Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/540 • TO-66 (TO-213AA) Package • Ideal for High Gain Amplifier and Medium Speed Switching Applications Rev. V5 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = -100 mA dc, 2N6298 IC = -100 mA dc, 2N6299 V(BR)CEO V dc -60 -80 — Collector - Emitter Cutoff Current VCE = -30 V dc, 2N6298 VCE = -40 V dc, 2N6299 ICEO mA dc — -0.5 -0.5 Collector - Emitter Cutoff Current VCE = -60 V dc, VBE = +1.5 V dc, 2N6298 VCE = -80 V dc, VBE = +1.5 V dc, 2N6299 ICEX1 µA dc — -10 -10 Emitter - Base Cutoff Current VEB = -5 V dc IEBO mA dc — -2.