VPT 2N6299
PNP Darlington Power Silicon Transistor
| Part No. | 2N6299 |
|---|---|
| Datasheet | 2N6299 Download |
| Manufacturer |  VPT |
| Description | PNP Darlington Power Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX, JANTXV per MIL-PRF-19500/540● TO-66 (TO-213AA) Package
● Ideal for High Gain Amplifier and Medium Speed Switching
APPLICATIONS
Rev. V5ELECTRICAL CHARACTERISTICS
(TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = -100 mA dc, 2N6298 IC = -100 mA dc, 2N6299 V(BR)CEO V dc -60 -80 — Collector - Emitter Cutoff Current VCE = -30 V dc, 2N6298 VCE = -40 V dc, 2N6299 ICEO mA dc — -0.5 -0.5 Collector - Emitter Cutoff Current VCE = -60 V dc, VBE = +1.5 V dc, 2N6298 VCE = -80 V dc, VBE = +1.5 V dc, 2N6299 ICEX1 µA dc — -10 -10 Emitter - Base Cutoff Current VEB = -5 V dc IEBO mA dc — -2.0 Forward - Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage VCE = -3 V dc, IC = -1 A dc VCE = -3 V dc, IC = -4 A dc VCE = -3 V dc, IC = -8 A dc IC = -4 A dc, IB = -16 mA dc IC = -8 A dc, IB = -80 mA dc IC = -8 A dc, IB = -80 A dc hFE - VCE(sat)1 VCE(sat)2 V...
