2N6341 - NPN High Power Silicon Transistor

VPT

Download the 2N6341 datasheet PDF. This datasheet also covers the 2N6338 variant, as both devices belong to the same npn high power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Available in JAN, JANTX, JANTXV per MIL-PRF-19500/509.
TO-3 (TO-204AA) Package.
Designed for Use in Hi-Reliability Power Amplifier and Switching Circuit.

📥 Download Datasheet

2N6341 npn high power silicon transistor by VPT - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N6338-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N6341
Manufacturer	VPT
File Size	463.00 KB
Description	NPN High Power Silicon Transistor
Datasheet	2N6341 Datasheet

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Other Datasheets by VPT

Part Number	Description
2N6300	NPN Darlington Power Silicon Transistor
2N6301	NPN Darlington Power Silicon Transistor
2N6338	NPN High Power Silicon Transistor
2N6351	NPN Darlington Power Silicon Transistor
2N6353	NPN Darlington Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N6338, 2N6341 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/509 • TO-3 (TO-204AA) Package • Designed for Use in Hi-Reliability Power Amplifier and Switching Circuit Applications Rev. V2 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = 50 mA dc, 2N6338 IC = 50 mA dc, 2N6341 V(BR)CEO V dc 100 150 — Collector - Emitter Cutoff Current Emitter - Base Cutoff Current VCE = 50 V dc, 2N6338 VCE = 75 V dc, 2N6341 VEB = 6.0 Vdc ICEO µA dc — 50 50 IEBO µA dc — 100 Collector - Emitter Cutoff Current VCE = 100 V dc; VBE = -1.5 V dc, 2N6338 VCE = 150 V dc; VBE = -1.