2N6438 - PNP Power Silicon Transistor

VPT

Download the 2N6438 datasheet PDF. This datasheet also covers the 2N6437 variant, as both devices belong to the same pnp power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Available in JAN, JANTX and JANTXV per MIL-PRF-19500/508.
TO-3 Package.
Designed for Power Amplifier and Medium Speed Switching.

📥 Download Datasheet

2N6438 pnp power silicon transistor by VPT - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N6437-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N6438
Manufacturer	VPT
File Size	468.33 KB
Description	PNP Power Silicon Transistor
Datasheet	2N6438 Datasheet

📁 Similar Datasheet

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Other Datasheets by VPT

Part Number	Description
2N6437	PNP Power Silicon Transistor
2N6032	NPN High Power Silicon Transistor
2N6033	NPN High Power Silicon Transistor
2N6051	PNP Darlington Power Silicon Transistor
2N6052	PNP Darlington Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N6437 & 2N6438 PNP Power Silicon Transistor Features • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/508 • TO-3 Package • Designed for Power Amplifier and Medium Speed Switching Applications Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage IC = -50 mA dc, 2N6437 IC = -50 mA dc, 2N6438 V(BR)CEO V dc -100 -120 Max. — Collector - Emitter Cutoff Current VCE = -50 V dc, 2N6437 VCE = -60 V dc, 2N6438 ICEO µA dc — -50 Collector - Emitter Cutoff Current VCE = -100 V dc, VBE = +1.5 V dc, 2N6437 VCE = -120 V dc, VBE = +1.5 V dc, 2N6438 ICEX1 µA dc — -5.