VPT 2N6438
PNP Power Silicon Transistor
| Part No. | 2N6438 |
|---|---|
| Datasheet | 2N6438 Download |
| Manufacturer |  VPT |
| Description | PNP Power Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX and JANTXV per MIL-PRF-19500/508● TO-3 Package
● Designed for Power Amplifier and Medium Speed Switching
APPLICATIONS
Rev. V1ELECTRICAL CHARACTERISTICS
(TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage IC = -50 mA dc, 2N6437 IC = -50 mA dc, 2N6438 V(BR)CEO V dc -100 -120 Max. — Collector - Emitter Cutoff Current VCE = -50 V dc, 2N6437 VCE = -60 V dc, 2N6438 ICEO µA dc — -50 Collector - Emitter Cutoff Current VCE = -100 V dc, VBE = +1.5 V dc, 2N6437 VCE = -120 V dc, VBE = +1.5 V dc, 2N6438 ICEX1 µA dc — -5.0 Collector - Base Cutoff Current VCB = -120 V dc, 2N6437 VCB = -140 V dc, 2N6438 ICBO µA dc — -10 Emitter - Base Cutoff Current VEB = -6 V dc IEBO µA dc — -100 Base - Emitter Voltage (saturated) IC = -10 A dc, IB = -1.0A dc VBE(sat) V dc — -1.8 Collector-Emitter Voltage (saturated) IC = -10 A dc, IB = -1.0 A dc IC = -25 A dc, IB = -2.5 A dc VCE(sat)1 VCE(sat)2 V dc — Forward C...
