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2N718A, 2N1613, 2N1613L
NPN Low Power Silicon Transistor
Features
• Available in JAN, JANTX and JANTXV per MIL-PRF-19500/181 • Available in TO-18 (2N718A), TO-39 (2N1613) and TO-5
(2N1613L) packages • Designed for Small Signal General Purpose Switching
Applications.
Electrical Characteristics (TA = +25oC unless otherwise specified)
Rev. V1
Parameter
Test Conditions
Symbol Units Min.
Max.
Breakdown Voltage, Collector - Emitter
IC = 100 µA dc
V(BR)CEO V dc
30
—
Collector - Base Cutoff Current
VCBO = 75 V dc
ICBO1 µA dc
—
10
Emitter - Base Cutoff Current
VEBO = 7.0 V dc
IEBO1 µA dc
—
10
Collector-Emitter Breakdown Voltage
IC= 100 µA dc; RBE = 10 Ω
V(BR)CER V dc
50
—
Emitter - Base Cutoff Current Collector - Base Cutoff Current
VEB = 5.