VPT CD5711
Schottky Barrier Diode
FEATURES
● Compatible With All Wire Bonding And Die Attach Techniques with The Exception Of Solder Reflow● Low Reverse Leakage
● Silicon Dioxide Passivated
● Also Available In JANHC/JANKC per MIL-PRF-19500/444 Rev. V1
ELECTRICAL CHARACTERISTICS
(TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Reverse Breakdown Voltage Reverse Breakdown Voltage Forward Voltage IR = 10 µA dc TA = -55oC IR = 10 µA dc IF = 1 mA dc V(BR)1 V dc 70 V(BR)2 V dc 70 VF1 V dc — Forward Voltage Forward Voltage Forward Voltage Reverse Current Reverse Current Capacitance IF = 15 mA dc TA = -55oC IF = 1 mA dc TA = -55oC IF = 15 mA dc VR = 50 V dc TA = +150oC VR = 50 V dc VR = 0, f = 1 MHz, Vsig = 50 mV (pk) VF2 V dc — VF3 V dc — VF4 V dc — IR1 nA dc — IR2 µA dc — C pF — Effective Carrier Lifetime (See DESC Drawing C68001) ϯCL ps Max. — — 0.410 1.0 .55 1.0 200 200 2.0 100ABSOLUTE MAXIMUM RATINGS
(TA = +25oC unless otherwise specified) Ratings Symbol Value Working Voltage VRWM 50 V...