CD914 Datasheet | VPT Components

Description

These silicon switching diode chips are compatible with all wire bonding and die attach techniques with the exception of solder reflow. Available in JANHC and JANKC per: CD914, CD4148 & CD4531: MIL-PRF-19500/116 CD4153: MIL-PRF-19500/133 CD6642: MIL-PRF-19500/578 CD6640: MIL-PRF-19500/609 Electrical Specifications: TA = +25°C (unless otherwise specified) TYPE Number CD914 CD4148 VBR @ 100 A 100 100 VRWM 75 75 IO VF1 VF2 VF3 IF = 10 mA IF = 50 mA IF = 100 mA mA Vdc Vdc Vdc 75 0.8 1.2 N/A 200 0.8 N/A 1.2 IR1 @ 20 Vdc IR2 IR3 IR4 @ 20 Vdc TA =150°C TA =150°C nsec nA A @ V A 5 25 0.5 @ 75 35 5 25 0.5 @ 75 35 A @ V 75 @ 75 75 @ 75 CD6642 100 75 200 0.8 N/A 1.2 5 25 0.5 @ 75 50 100 @ 75 CD4454 75 50 200 1.0 N/A N/A 4 N/A 0.1 @ 50 N/A 100 @ 50 @ 0V pF 4.0 4.0 4.0 2.0 TYPE Number VBR IR = 10 A* CD3600 75 CD4150 75 CD6640 75 CD4153 75* VRWM 50 50 50 50 IR1 VR = 50 Vdc IR2 VR = 50 Vdc TA =150°C Capacitance VR = 0; f = 1 MHz; ac signals = 50 mV (p-p) A Vdc A Vdc pF 0.10 100 2.5 0.10 100 2.5 0.10 90 2.5 0.05 150 2.0 @ 5 A for CD4153 Foward Voltage Limits - CD3600, CD4150 and CD6640: nsec 4 4 4 4 Limits VF1 VF2 VF3 VF4 VF5 IF = 1 mA dc IF = 10 mA dc IF = 50 mA dc IF = 100 mA dc IF = 200 mA dc (Pulsed) (Pulsed) (Pulsed) (Pulsed) (Pulsed) Vdc 0.540 0.620 Vdc 0.680 0.740 Vdc 0.760 0.860 Vdc 0.820 0.920 Vdc 0.870 1.000 @1.5 V pF 2.8 2.8 2.8 N/A Limits VF1 IF = 100 A dc Vdc 0.49 0.55 VF2 VF3 IF = 250 A dc IF = 1 mA dc Vdc 0.53 0.59 Vdc 0.59 0.67 VF4 IF = 2 mA dc Vdc 0.62 0.70 VF5 IF = 10 mA dc Vdc 0.70 0.81 VF6 IF = 20 mA dc Vdc 0.74 0.88 1 * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.