JANHCCR2N3019
JANHCCR2N3019 is NPN Low Power Silicon Transistor manufactured by VPT Components.
- Part of the JANHCC2N3019 comparator family.
- Part of the JANHCC2N3019 comparator family.
JANHCC2N3019, JANHCCR2N3019 JANKCC2N3019, JANKCCR2N3019
NPN Low Power Silicon Transistor Die
Features
- Qualified to MIL-PRF-19500/391
- Lightweight & Low Power
- Ideal for Space, Military, & Other High Reliability
Applications
Rev. V1
Electrical Characteristics (TA = +25o C unless otherwise specified)
Parameter Collector
- Emitter Breakdown Voltage
Collector
- Base Cutoff Current Emitter
- Base Cutoff Current Collector
- Emitter Cutoff Current Emitter
- Base Cutoff Current
Forward Current Transfer Ratio
Test Conditions
IC = 30 m A
VCB = 140 V
VEB = 7 V
VCE = 90 V
VEB = 5 Vdc
VCE = 10 V dc; IC = 150 m A dc VCE = 10 V dc; IC = 0.1 m A dc VCE = 10 V dc; IC = 10 m A dc VCE = 10 V dc; IC = 500 m A dc
VCE = 10 V dc; IC = 1 A dc
Symbol Units Min.
V(BR)CEO V dc
ICBO1 µA dc
- IEBO1 µA dc
- ICES1 n A...
