JANHCD2N3501 Datasheet | VPT Components

JANHCD2N3500, JANHCD2N3501 JANKCD2N3500, JANKCD2N3501 NPN Medium Power Silicon Transistor Die Features - Available in JANHC, JANKC and R versions per MIL-PRF-19500/366 - Rad Hard Assurance Levels M, D, P, L and R - Ideal for High Voltage Inductive Load Switching Applications Rev. V1 Electrical Characteristics (TA = +25o C unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = 10 m A dc V(BR)CEO V dc - Collector - Base Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Saturation Voltage Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter Saturation Voltage Collector - Base Cutoff Current Forward Current Transfer Ratio VCB = 150 V ICBO1 µA dc -...