JANHCE2N5154 Datasheet | VPT Components

JANHCE2N5152, JANHCE2N5154 JANKCE2N5152, JANHCE2N5154 NPN Power Silicon Transistor Die Features - Available in mercial JANHCE and JANKCE MIL-PRF19500/544 - Rad Tolerant to 100K rads (Si) - Ideal for High Current Switching Applications Rev. V1 Electrical Characteristics (TA = +25o C unless otherwise specified) Parameter Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage IC = 100 m A dc, IB = 0 V(BR)CEO V dc Emitter - Base Cutoff Current Collector - Emitter Cutoff Current VEB = 4.0 Vdc, IC = 0 VEB = 5.5 Vdc, IC = 0 VCE = 60 V dc, VBE = 0 VCE = 100 V dc, VBE = 0 IEBO1 µA dc IEBO2 m A dc - ICES1 µA dc ICES2 m A dc - Collector - Emitter Cutoff Current VCE = 40 Vdc, IB = 0 ICEO µA dc - Forward Current Transfer Ratio IC = 50 m A dc, VCE = 5.0 Vdc 2N5152, 2N5152L 2N5154, 2N5154L IC = 2.5 A dc, VCE = 5.0 Vdc 2N5152, 2N5152L 2N5154, 2N5154L IC = 5.0 A dc, VCE = 5.0 Vdc 2N5152, 2N5152L 2N5154, 2N5154L h...