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JANKCC2N3019 - NPN Low Power Silicon Transistor

This page provides the datasheet information for the JANKCC2N3019, a member of the JANHCC2N3019 NPN Low Power Silicon Transistor family.

Datasheet Summary

Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Features

  • Qualified to MIL-PRF-19500/391.
  • Lightweight & Low Power.
  • Ideal for Space, Military, & Other High Reliability.

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Datasheet Details

Part number JANKCC2N3019
Manufacturer VPT
File Size 324.22 KB
Description NPN Low Power Silicon Transistor
Datasheet download datasheet JANKCC2N3019 Datasheet
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Full PDF Text Transcription

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JANHCC2N3019, JANHCCR2N3019 JANKCC2N3019, JANKCCR2N3019 NPN Low Power Silicon Transistor Die Features • Qualified to MIL-PRF-19500/391 • Lightweight & Low Power • Ideal for Space, Military, & Other High Reliability Applications Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Forward Current Transfer Ratio Test Conditions IC = 30 mA VCB = 140 V VEB = 7 V VCE = 90 V VEB = 5 Vdc VCE = 10 V dc; IC = 150 mA dc VCE = 10 V dc; IC = 0.1 mA dc VCE = 10 V dc; IC = 10 mA dc VCE = 10 V dc; IC = 500 mA dc VCE = 10 V dc; IC = 1 A dc Symbol Units Min.
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