JANKCC2N3019 Datasheet | VPT Components

JANHCC2N3019, JANHCCR2N3019 JANKCC2N3019, JANKCCR2N3019 NPN Low Power Silicon Transistor Die Features - Qualified to MIL-PRF-19500/391 - Lightweight & Low Power - Ideal for Space, Military, & Other High Reliability Applications Rev. V1 Electrical Characteristics (TA = +25o C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Forward Current Transfer Ratio Test Conditions IC = 30 m A VCB = 140 V VEB = 7 V VCE = 90 V VEB = 5 Vdc VCE = 10 V dc; IC = 150 m A dc VCE = 10 V dc; IC = 0.1 m A dc VCE = 10 V dc; IC = 10 m A dc VCE = 10 V dc; IC = 500 m A dc VCE = 10 V dc; IC = 1 A dc Symbol Units Min. V(BR)CEO V dc ICBO1 µA dc - IEBO1 µA dc - ICES1 n A...