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VSM50N15 - MOSFET

This page provides the datasheet information for the VSM50N15, a member of the VSM50N15-TC MOSFET family.

Datasheet Summary

Description

TheVSM50N15uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =150V,ID =50A RDS(ON).

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Datasheet preview – VSM50N15

Datasheet Details

Part number VSM50N15
Manufacturer VSEEI
File Size 662.21 KB
Description MOSFET
Datasheet download datasheet VSM50N15 Datasheet
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Full PDF Text Transcription

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Description TheVSM50N15uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply VSM50N15-TC Shenzhen VSEEI Semiconductor Co.
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