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VSM50N15 - MOSFET

Download the VSM50N15 datasheet PDF. This datasheet also covers the VSM50N15-TC variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

TheVSM50N15uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =150V,ID =50A RDS(ON).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VSM50N15-TC-VSEEI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VSM50N15
Manufacturer VSEEI
File Size 662.21 KB
Description MOSFET
Datasheet download datasheet VSM50N15 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description TheVSM50N15uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply VSM50N15-TC Shenzhen VSEEI Semiconductor Co.