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VST12N100 Datasheet

MOSFET

Manufacturer: VSEEI

This datasheet includes multiple variants, all published together in a single manufacturer document.

VST12N100 Overview

The VST12N100 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

VST12N100 Key Features

  • VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous

VST12N100 Distributor