VST12N100
Description
The VST12N100 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
General Features
- VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 175 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
Application
- DC/DC Converter
- Ideal for high-frequency switching and synchronous rectification
VST12N100-TF
Shenzhen VSEEI Semiconductor Co., Ltd
TO-220F
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
VST12N100-TF
TO-220F
- -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source...
