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VST12N100 - MOSFET

Download the VST12N100 datasheet PDF. This datasheet also covers the VST12N100-TF variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The VST12N100 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VST12N100-TF-VSEEI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VST12N100
Manufacturer VSEEI
File Size 717.03 KB
Description MOSFET
Datasheet download datasheet VST12N100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Description The VST12N100 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification VST12N100-TF Shenzhen VSEEI Semiconductor Co.