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VST12N100 - MOSFET

This page provides the datasheet information for the VST12N100, a member of the VST12N100-TF MOSFET family.

Datasheet Summary

Description

The VST12N100 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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Datasheet preview – VST12N100

Datasheet Details

Part number VST12N100
Manufacturer VSEEI
File Size 717.03 KB
Description MOSFET
Datasheet download datasheet VST12N100 Datasheet
Additional preview pages of the VST12N100 datasheet.

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    Full PDF Text Transcription

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    Description The VST12N100 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification VST12N100-TF Shenzhen VSEEI Semiconductor Co.
    Published: |