G2SB20 Datasheet | Vaishali Semiconductor

G2SB20 thru G2SB80 New Product Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Case Type GBL 0.125 (3.17) x 45 degrees Chamfer 0.825 (20.9) 0.815 (20.7) Reverse Voltage 200 to 800V Forward Current 1.5A Features 0.421 (10.7) 0.411 (10.4) 0.080 (2.03) 0.060 (1.50) 0.095 (2.41) 0.080 (2.03) 0.098 (2.5) 0.075 (1.9) 0.043 (1.1) 0.035 (0.9) 0.210 (5.3) 0.190 (4.8) 0.040 (1.02) 0.030 (0.76) 0.022 (0.56) 0.018 (0.46) 0.098 (2.5) 0.075 (1.9) 0.718 (18.2) 0.682 (17.3) Lead Depth 0.022 (0.56) 0.018 (0.46) - Plastic package has Underwriters Laboratory Flammability Classification 94V-0 - This series is UL listed under the Recognized ponent Index, file number E54214 - High case dielectric strength - Ideal for printed circuit boards - Glass passivated chip junction - High surge current capability - High temperature soldering guaranteed: 260°C/10 seconds, 0.375 (9.5mm) lead length, 5lbs. (2.3kg) tension Mechanical Data 0.140 (3.56) 0.128 (3.25) Polarity shown on front side of case, positive lead beveled corner. Dimensions in inches and (millimeters) Case: Molded plastic body over passivated junctions Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight: 0.071 oz., 2.0 g Packaging codes/options: 1/400 EA. per Bulk Tray Stack, 4K/box Ratings at 25°C ambient temperature unless otherwise specified. Maximum Ratings & Thermal Characteristics Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified output current at TA = 25°C Peak forward surge current single sine-wave superimposed on rated load (JEDEC Method) Rating for fusing (t<8.3ms) Typical thermal resistance per leg Operating junction storage and temperature range Symbol VRRM VRMS VDC IF(AV) IFSM I2t RθJA RθJL TJ, TSTG G2SB20 200 140 200 G2SB60 600 420 600 1.5 80 27 40...