SMG188 Datasheet | Vaishali Semiconductor

FEATURES - Low profile package - Ideal for automated placement - Glass passivated chip junction - Available in Unidirectional and Bidirectional - 600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % - Excellent clamping capability - Very fast response time - Low incremental surge resistance - Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C - Solder Dip 260 °C, 40 seconds - ponent in accordance to Ro HS 2002/95/EC and WEEE 2002/96/EC 5.0 V to 188 V 600 W 100 A 150 °C DO-215AA (SMBG) MAJOR RATINGS AND CHARACTERISTICS VWM PPPM .. IFSM (Unidirectional only) Tj max. TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, puter, industrial, automotive and telemunication. MECHANICAL DATA Case: DO-215AA (SMBG) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for mercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: For unidirectional types the band denotes cathode end, no marking on bidirectional types DEVICES FOR BIDIRECTION APPLICATIONS For bidirectional devices use C or CA suffix (e.g. SMBG10CA). Electrical characteristics apply in both directions. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 µs waveform (1,2) (see Fig. 1) (2) SYMBOL PPPM IPPM IFSM TJ, TSTG VALUE Minimum 600 see next table 100 - 55 to + 150 UNIT W A A °C Peak pulse current with a 10/1000 µs waveform (1) Peak forward surge current 8.3 ms single half sine-wave uni-directional only Operating junction and storage temperature range Note: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2 (2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal Document Number 88456 05-Jul-06 .vishay....