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VG26V17405FJ

Manufacturer: Vanguard International Semiconductor

VG26V17405FJ datasheet by Vanguard International Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

VG26V17405FJ datasheet preview

VG26V17405FJ Datasheet Details

Part number VG26V17405FJ
Datasheet VG26V17405FJ VG2617405FJ Datasheet (PDF)
File Size 549.54 KB
Manufacturer Vanguard International Semiconductor
Description CMOS DRAM
VG26V17405FJ page 2 VG26V17405FJ page 3

VG26V17405FJ Overview

VG26(V)(S)17405FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application.

VG26V17405FJ Key Features

  • Single 5V( ± 10 %) or 3.3V(+10%,-5%) only power supply
  • High speed tRAC acess time: 50/60ns
  • Low power dissipation
  • Standby mode: 5V version 1.375 mW (Mas) 3.3V version 0.54 mW (Mas)
  • Extended
  • out(EDO) page mode access
  • I/O level: TTL patible (Vcc = 5V) LVTTL patible (Vcc = 3.3V)
  • 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)
  • 4 refresh modesh
  • RAS only refresh

VG26V17405F from other manufacturers

View VG26V17405F datasheet index

Brand Logo Part Number Description Other Manufacturers
Vanguard Microelectronics Limited Logo VG26V17405F CMOS DRAM Vanguard Microelectronics Limited
Vanguard Microelectronics Limited Logo VG26V17405 CMOS DRAM Vanguard Microelectronics Limited
Vanguard International Semiconductor logo - Manufacturer

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