VG3617161ET Overview
VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern for current high-speed application.
VG3617161ET Key Features
- Single 3.3V +/- 0.3V power supply
- Clock frequency:166MHz, 143MHz, 125MHz
- Fully synchronous with all signals referenced to a positive clock edge
- Programmable CAS Iatency (2,3)
- Programmable burst length (1,2,4,8,& Full page)
- Programmable wrap sequence (Sequential/Interleave)
- Automatic precharge and controlled precharge
- Auto refresh and self refresh modes
- Dual internal banks controlled by A11(Bank select)
- Simultaneous and independent two bank operation