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VG36648041DT

Manufacturer: Vanguard International Semiconductor

VG36648041DT datasheet by Vanguard International Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

VG36648041DT datasheet preview

VG36648041DT Datasheet Details

Part number VG36648041DT
Datasheet VG36648041DT VG36641641DT Datasheet (PDF)
File Size 1.00 MB
Manufacturer Vanguard International Semiconductor
Description CMOS Synchronous Dynamic RAM
VG36648041DT page 2 VG36648041DT page 3

VG36648041DT Overview

4 (word x bit x bank), respectively. All input and outputs are synchronized with the positive edge of the clock.The synchronous DRAMs are patible with Low Voltage TTL (LVTTL).These products are packaged in 54-pin TSOPII.

VG36648041DT Key Features

  • Single 3.3V ( ± 0.3V ) power supply
  • Fully synchronous operation referenced to clock rising edge
  • Possible to assert random column access in every cycle
  • Quad internal banks controlled by A12 & A13 (Bank Select)
  • Byte control by LDQM and UDQM for VG36641641D
  • Programmable Wrap sequence (Sequential / Interleave)
  • Programmable burst length (1, 2, 4, 8 and full page)
  • Programmable /CAS latency (2 and 3)
  • Automatic precharge and controlled precharge
  • CBR (Auto) refresh and self refresh
Vanguard International Semiconductor logo - Manufacturer

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