Description
The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode.
Features
- Single 5V or 3.3V only power supply.
- High speed tRAC access time: 50/60ns.
- Extended-data-out (EDO) page mode access.
- I/O level: TTL compatible (Vcc = 5V) LVTTL compatible (Vcc = 3.3V).
- 4 refresh modes: - RAS only refresh - CAS - before - RAS refresh - Hidden refresh - Self-refresh.
- Refresh interval: - RAS only refresh, CAS - before - RAS refresh and hidden refresh: 1024 cycles in 16 ms - Self-refresh: 1024 cycles.
- JEDEC standard pi.
VG2618165D Datasheet
