VS1401ATH Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Very low on-resistance RDS(on) @ VGS=10 V - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 100V/200A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 100 V 4.5 mΩ 200 A TO-220AB Part ID VS1401ATH Package Type TO-220AB Marking 1401ATH Tape and reel information 50pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM IDSM Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain current @VGS=10V TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C EAS PD PDSM Avalanche energy, single pulsed ② Maximum power dissipation Maximum power dissipation ③ TC =25°C TA=25°C TSTG,TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter Typical RθJC Thermal Resistance, Junction-to-Case...