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VS2508AE - P-Channel Advanced Power MOSFET

Key Features

  • Low on-resistance RDS(on) @ VGS=-2.5 V.
  • Fast Switching and High efficiency.
  • Enhancement mode.
  • Pb-free lead plating; RoHS compliant VS2508AE -20V/-55A P-Channel Advanced Power MOSFET V DS -20 V R @ DS(on),TYP VGS=-4.5 V 7.3 mΩ R @ DS(on),TYP VGS=-2.5V 10 mΩ ID -55 A PDFN3333 Part ID VS2508AE Package Type PDFN3333 Marking 2508AE Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Sour.

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Datasheet Details

Part number VS2508AE
Manufacturer Vanguard Semiconductor
File Size 1.06 MB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet VS2508AE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Low on-resistance RDS(on) @ VGS=-2.5 V  Fast Switching and High efficiency  Enhancement mode  Pb-free lead plating; RoHS compliant VS2508AE -20V/-55A P-Channel Advanced Power MOSFET V DS -20 V R @ DS(on),TYP VGS=-4.5 V 7.3 mΩ R @ DS(on),TYP VGS=-2.5V 10 mΩ ID -55 A PDFN3333 Part ID VS2508AE Package Type PDFN3333 Marking 2508AE Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage VGS Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-4.5V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=-4.