VS2508AE Description
Features Low on-resistance RDS(on) @ VGS=-2.5 V Fast Switching and High efficiency Enhancement mode Pb-free lead plating; Symbol Parameter VS2508AE -20V/-55A P-Channel Advanced Power MOSFET Condition Min. Forward on voltage Reverse Recovery Time Reverse Recovery Charge ISD=-20A,VGS=0V Tj=25℃,Isd=-15A, VGS=0V di/dt=-100A/μs -- -0.8 -1.2 V -- 16 -- ns -- 7.1 --.
VS2508AE Key Features
- Low on-resistance RDS(on) @ VGS=-2.5 V
- Fast Switching and High efficiency
- Enhancement mode
- Pb-free lead plating; RoHS pliant
- 20V/-55A P-Channel Advanced Power MOSFET
- JAN, 2020
- 20V/-55A P-Channel Advanced Power MOSFET
- 0.3 -0.6 -1.0
- 0.8 -1.2