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VS2622AE - N-Channel Advanced Power MOSFET

Key Features

  • N-Channel，2.5V logic level control.
  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=2.5 V.
  • Fast Switching and High efficiency.
  • Pb-free lead plating; RoHS compliant VS2622AE 20V/56A N-Channel Advanced Power MOSFET V DS 20 V R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5V 4.8 mΩ 5.6 mΩ I D 56 A PDFN3333 Part ID VS2622AE Package Type PDFN3333 Marking 2622AE Tape and reel information 5000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol P.

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Datasheet Details

Part number VS2622AE
Manufacturer Vanguard Semiconductor
File Size 610.39 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS2622AE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  N-Channel，2.5V logic level control  Enhancement mode  Low on-resistance RDS(on) @ VGS=2.5 V  Fast Switching and High efficiency  Pb-free lead plating; RoHS compliant VS2622AE 20V/56A N-Channel Advanced Power MOSFET V DS 20 V R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5V 4.8 mΩ 5.6 mΩ I D 56 A PDFN3333 Part ID VS2622AE Package Type PDFN3333 Marking 2622AE Tape and reel information 5000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage VGS Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=4.5V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=4.