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VS3400BL - N-Channel Advanced Power MOSFET

General Description

VS3400BL designed by the trench processing techniques to achieve extremely low on-resistance.

And fast switching speed and improved transfer effective .

Key Features

  • Ron(typ. )=30 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant VS3400BL 30V/5.8A N-Channel Advanced Power MOSFET.

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Datasheet Details

Part number VS3400BL
Manufacturer Vanguard Semiconductor
File Size 246.46 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS3400BL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features Ron(typ.)=30 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant VS3400BL 30V/5.8A N-Channel Advanced Power MOSFET Description VS3400BL designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.