VS3510AE Description
Features P-Channel，-5V Logic Level Control Low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching Enhancement mode Pb-free lead plating; Symbol Parameter VS3510AE -30V/-37A P-Channel Advanced Power MOSFET Condition Min. Forward on voltage Reverse Recovery Time Reverse Recovery Charge ISD=-20A,VGS=0V Tj=25℃,Isd=-20A, VGS=0V di/dt=-500A/μs -- -0.9 -1.2 V -- 27 -- ns -- 77 -- nC ① Repetitive rating;.
VS3510AE Key Features
- P-Channel，-5V Logic Level Control
- Low on-resistance RDS(on) @ VGS=-4.5 V
- Fast Switching
- Enhancement mode
- Pb-free lead plating; RoHS pliant
- 30V/-37A P-Channel Advanced Power MOSFET
- 30 V 10 mΩ 18 mΩ -37 A
- 30 ±25 -37 -37 -23 -148 49 33 -55 to 150
- SEP, 2020
- 30V/-37A P-Channel Advanced Power MOSFET