VS3618AH Datasheet | Vanguard Semiconductor

Features - N-Channel - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching - High Effective - Pb-free lead plating; Ro HS pliant; Hg-Free 30V/8A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 9.5 mΩ 13 mΩ 8A SOT23-6L Part ID VS3618AH Package Type SOT23-6L Marking VS02 Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TSTG Storage temperature range Thermal Characteristics Symbol Parameter TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C RθJL R JA Thermal Resistance-Junction to Lead Thermal Resistance-Junction to Ambient Rating 30 1.6 8 5 32 1.25 ±20 -55 to 150 Typical 60 100 Unit V A A A A W V...