VS40200AT Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5V - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 40V/200A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5V ID 40 V 2.5 mΩ 3.5 mΩ 200 A TO-220AB Part ID VS40200AT Package Type TO-220AB Marking 40200AT Tape and reel information 50pcs/Tube Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=-10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C Rating 40 200 200 142 800 390...