VS4435AS Datasheet | Vanguard Semiconductor

Features P-CH: -30V/-7.8A,RDS(ON)=18mΩ Low On-Resistance Fast Switching Lead-Free，Green Product -30V/-7.8A P Channel Advanced Power MOSFET Pin Description Description VS4435AS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features bine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink TA =25°C IDM Pulse Drain Current Tested① TA =25°C ID Continuous Drain Current(VGS=-10V) TA =25°C TA =100°C PD Maximum Power Dissipation TA =25°C RJC Thermal Resistance-Junction to Case RJA Thermal Resistance...