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VS4503AS - N+P-Channel Advanced Power MOSFET

General Description

VS4503AS designed by the trench processing techniques to achieve extremely low on-resistance.

And fast switching speed and improved transfer effective .

Key Features

  • N-CH: 30V/8A,RDS(ON)=18mΩ.
  • P-CH: -30V/-7.8A,RDS(ON)=20mΩ.
  • Low On-Resistance.
  • 150°C Operating Temperature.
  • Fast Switching.
  • Lead-Free, Green Product VS4503AS 30V/8A N+P Channel Advanced Power MOSFET Pin.

📥 Download Datasheet

Datasheet Details

Part number VS4503AS
Manufacturer Vanguard Semiconductor
File Size 308.04 KB
Description N+P-Channel Advanced Power MOSFET
Datasheet download datasheet VS4503AS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features ♦N-CH: 30V/8A,RDS(ON)=18mΩ ♦P-CH: -30V/-7.8A,RDS(ON)=20mΩ ♦Low On-Resistance ♦150°C Operating Temperature ♦Fast Switching ♦Lead-Free, Green Product VS4503AS 30V/8A N+P Channel Advanced Power MOSFET Pin Description Description VS4503AS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.