VS4503AS Datasheet | Vanguard Semiconductor

Features - N-CH: 30V/8A,RDS(ON)=18mΩ - P-CH: -30V/-7.8A,RDS(ON)=20mΩ - Low On-Resistance - 150°C Operating Temperature - Fast Switching - Lead-Free, Green Product 30V/8A N+P Channel Advanced Power MOSFET Pin Description Description VS4503AS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features bine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current① Mounted on Large Heat Sink TC =25°C IDM Pulse Drain Current Tested② TC =25°C TC =25°C ID Continuous Drain Current(VGS=-10V) TC =100°C PD Maximum Power Dissipation TC =25°C RθJA Thermal...