VS4604DT Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Very low on-resistance RDS(on) @ VGS=4.5 V - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant 40V/285A N-Channel Advanced Power MOSFET V DS 40 V R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V 1.7 mΩ 2.3 mΩ I D 285 A TO-220AB Part ID VS4604DT Package Type TO-220AB Marking 4604DT Tape and reel information 50pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Rating 40 285 285 202 1140...