VS4805DS Datasheet | Vanguard Semiconductor

Features BVDSS (typ.)=-30V Ron(typ.)=18 mΩ @VGS=-10V Ron(typ.)=28 mΩ @VGS=-4.5V Low On-Resistance Fast Switching Lead-Free, Hg-Free,Rohs pliant -30V/-8A Dual P-Channel Advanced Power MOSFET Pin Description Description VS4805DS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features bine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC =25°C IDM Pulse Drain Current Tested TC =25°C ID Continuous Drain Current(VGS=-10V) TC =25°C TC =100°C PD Maximum Power Dissipation TC =25°C RJA Thermal...